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| Power Transistors 2SB936, 2SB936A Silicon PNP epitaxial planar type For low-voltage switching 10.00.3 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.50.1 1.5max. 1.1max. 10.5min. 2.0 0.80.1 0.5max. s 2.540.3 Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -40 -50 -20 -40 -5 -20 -10 40 1.3 150 -55 to +150 Unit V 2SB936 2SB936A 2SB936 5.080.5 1 2 3 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 emitter voltage 2SB936A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 14.70.5 4.40.5 0 to 0.4 V A A W 10.00.3 1.5-0.4 4.40.5 2.0 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 5.080.5 C C 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB936 2SB936A 2SB936 2SB936A 1:Base 2:Collector 3:Emitter N Type Package (DS) (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = -3A, IB1 = - 0.1A, IB2 = 0.1A Conditions VCB = -40V, IE = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -3A IC = -10A, IB = - 0.33A IC = -10A, IB = - 0.33A VCE = -10V, IC = - 0.5A, f = 10MHz VCB = -10V, IE = 0, f = 1MHz 100 400 0.1 0.5 0.1 -20 -40 45 90 260 - 0.6 -1.5 V V MHz pF s s s min typ max -50 -50 -50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 3.0-0.2 +0.4 +0 1 Power Transistors PC -- Ta 50 -12 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) IB=-100mA -10 -80mA -60mA -50mA -40mA -6 -35mA -30mA -25mA -4 -20mA -15mA -2 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 -10mA -5mA TC=25C 2SB936, 2SB936A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -10 VCE(sat) -- IC IC/IB=30 Collector power dissipation PC (W) Collector current IC (A) 40 (1) -3 -8 -1 TC=100C 25C -25C 30 - 0.3 20 - 0.1 10 - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -10 hFE -- IC IC/IB=30 10000 VCE=-2V 10000 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -3 TC=-25C 100C 25C 1000 300 100 -25C 30 10 3 1 - 0.1 - 0.3 25C -1 TC=100C - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 Transition frequency fT (MHz) -10 -30 -100 3000 - 0.3 -1 -3 -10 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 10 IE=0 f=1MHz TC=25C ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (-IB1=IB2) VCC=-20V TC=25C tstg 0.3 ton 0.1 tf 0.03 Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP t=1ms -10 -3 300ms -1 IC 10ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 Switching time ton,tstg,tf (s) 3 1 Collector current IC (A) - 0.3 - 0.1 - 0.03 0.01 -1 -3 -10 -30 -100 0 -1 -2 -3 -4 -5 -6 -7 -8 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 2SB936A -100 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB936 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 2SB936, 2SB936A Thermal resistance Rth(t) (C/W) 102 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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